1 item symbol ratings unit remarks drain-source voltage v ds 700 v dsx 700 continuous drain current i d 17 pulsed drain current i d(puls] 68 gate-source voltage v gs 30 non-repetitive maximum avalanche current i as 17 repetitive maximum avalanche current i ar 8.5 non-repetitive e as 989 maximum avalanche energy repetitive e ar 17.0 maximum avalanche energy maximum drain-source dv/dt dv ds /dt 40 peak diode recovery dv/dt dv/dt 5 max. power dissipation p d 170 3.13 operating and storage t ch +150 temperature range t stg isolation voltage v iso 2 electrical characteristics (t c =25c unless otherwise specified) thermal characteristics 2SK3891-01R fuji power mosfet features high speed switching, low on-resistance low driving power, avalanche-proof no secondary breakdown applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =700v v gs =0v v ds =560v v gs =0v v gs =30v i d =8.5a v gs =10v i d =8.5a v ds =25v v cc =600v i d =8.5a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 0.735 40.0 c/w c/w symbol bv dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd v sd t rr q rr item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mhz v cc =350v i d =17a v gs =10v i f =17a v gs =0v t ch =25c i f =17a v gs =0v -di/dt=100a/s t ch =25c v v a a v a a mj mj kv/s kv/s w c c kvrms 700 3.0 5.0 25 250 100 0.47 0.60 6.0 12 1750 2625 250 375 13 19.5 20 30 16 24 60 90 20 30 46 69 14 21 17 26 1.10 1.50 4 25 -55 to +150 outline drawings (mm) www.fujielectric.co.jp/fdt/scd super f ap-g series n-channel silicon power mosfet equivalent circuit schematic 200407 v gs =-30v note *1 note *2 note *3 v ds 700v note *4 tc=25c ta=25c t=60sec f=60hz = < note *1:tch 150c note *2:startingtch=25c,i as =6.8a,l=37.7mh, v cc =100v,r g =50 ? e as limited by maximum channel temperature and avalanche current. see to the ?avalanche energy? graph note *3:repetitive rating:pulse width limited by maximum channel temperature. see to the ?transient thermal impedance? graph. note *4:i f -i d , -di/dt=50a/s,v cc bv dss , tch 150c = < gate(g) source(s) drain(d) = < = < = <
2 characteristics 2SK3891-01R fuji power mosfet 0 25 50 75 100 125 150 0 50 100 150 200 250 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 4 8 121620 0 5 10 15 20 25 30 6.0v 20v 10v 8.0v 6.5v vgs=5.5v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 6.0v rds(on) [ ? ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 8.0v 6.5v vgs=5.5v -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=8.5a,vgs=10v
3 2SK3891-01R fuji power mosfet -50-25 0 255075100125150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250 a vgs(th) [v] tch [ c] 0 10203040506070 0 2 4 6 8 10 12 14 qg [nc] typical gate charge characteristics vgs=f(qg):id=17a,tch=25 c vgs [v] 560v 350v vcc= 140v 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 10 4 c [pf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id t=f(id):vcc=600v,vgs=10v,rg=10 ? td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 i as =6.8a i as =10.2a i as =17a eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=100v
4 http://www .fujielectric.co.jp/fdt/scd/ 2SK3891-01R fuji power mosfet 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=100v avalanche current i av [a] t av [sec] 0 25 50 75 100 125 150 175 200 0 2 4 6 8 10 12 14 16 18 repetitive non-repetitive (single pulse) i av [a] starting tch [ c] maximum avalanche current vs. starting tch i(av)=f(starting tch):vcc=100v 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec]
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